| No. |
Part Name |
Description |
Manufacturer |
| 6121 |
J20A |
20 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
| 6122 |
J20AQ |
J20AQ 20 Lead Ceramic Dual-In-Line Package, EPROM |
National Semiconductor |
| 6123 |
J22A |
22 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
| 6124 |
J24A |
24 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
| 6125 |
J24AQ |
24 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 6126 |
J24BQ |
24 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 6127 |
J24CQ |
24 Lead (0.300 in. Wide) Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 6128 |
J24E |
24 Lead (0.400 in. Wide) Ceramic Dual-in-Line Package |
National Semiconductor |
| 6129 |
J24F |
24 Lead (0.300 Centers) Ceramic Dual-In-Line Package |
National Semiconductor |
| 6130 |
J28A |
28 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
| 6131 |
J28AQ |
28 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 6132 |
J28B |
28 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
| 6133 |
J28BQ |
28 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 6134 |
J28CQ |
28 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 6135 |
J32AQ |
32 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 6136 |
J32B |
32 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
| 6137 |
J40A |
40 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
| 6138 |
J40AQ |
40 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 6139 |
J40BQ |
40 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 6140 |
JA28A |
28-Lead (0.300 Centers) Ceramic Dual-In-Line Package |
National Semiconductor |
| 6141 |
K152XXX |
Leaded Ceramic Multilayer Capacitors |
Vishay |
| 6142 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 6143 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 6144 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 6145 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 6146 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 6147 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 6148 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 6149 |
K4E16(7)0411(2)D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 6150 |
K4E16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
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