| No. |
Part Name |
Description |
Manufacturer |
| 6121 |
REF5040MDREP |
Enhanced Product Low-Noise, Very Low Drift, Precision Voltage Reference 8-SOIC -55 to 125 |
Texas Instruments |
| 6122 |
REF5050-EP |
Enhanced Product Low-Noise, Very Low Drift, Precision Voltage Reference 8-SOIC -55 to 125 |
Texas Instruments |
| 6123 |
REF5050MDREP |
Enhanced Product Low-Noise, Very Low Drift, Precision Voltage Reference 8-SOIC -55 to 125 |
Texas Instruments |
| 6124 |
RF1K49086 |
3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET |
Fairchild Semiconductor |
| 6125 |
RF1S30N06LE |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6126 |
RF1S30N06LESM |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6127 |
RF1S45N06 |
45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6128 |
RF1S45N06SM |
45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6129 |
RF1S60P03 |
60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6130 |
RF1S70N06 |
70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6131 |
RFD16N03 |
16A/ 30V/ Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6132 |
RFG45N06 |
45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6133 |
RFH35N08 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 6134 |
RFH35N10 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 6135 |
RFH45N05 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 6136 |
RFH45N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 6137 |
RFM12P08 |
P-CHANNEL ENHANCEMENT-MODE |
General Semiconductor |
| 6138 |
RFP15N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 6139 |
RFP5P12 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 6140 |
RFP5P15 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 6141 |
RFV10N50 |
10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs |
Intersil |
| 6142 |
RFV10N50BE |
10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs |
Intersil |
| 6143 |
RLD03N06CLE |
0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6144 |
RLD03N06CLESM |
0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6145 |
RLP03N06CLE |
0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
| 6146 |
S1T8528 |
ENHANCED-1 CHIP CT0 RF IC |
Samsung Electronic |
| 6147 |
S1T8528X01 |
ENHANCED-1 CHIP CT0 RF IC Data Sheet |
Samsung Electronic |
| 6148 |
S1T8528X01-Q0R0 |
Enhanced-1 chip CTO RF IC |
Samsung Electronic |
| 6149 |
S5LS20206ASGWTMEP |
Enhanced Product 16- and 32-Bit RISC Flash Microcontroller 337-NFBGA -55 to 125 |
Texas Instruments |
| 6150 |
S5LS20206ASPGEMEP |
Enhanced Product 16- and 32-Bit RISC Flash Microcontroller 144-LQFP -55 to 125 |
Texas Instruments |
| | | |
