| No. |
Part Name |
Description |
Manufacturer |
| 6121 |
JH3A-DC110V |
JH relay. 30 Amp power relay with space saving design. 3 form A. Coil voltage 110 V DC. Single side stable. |
Matsushita Electric Works(Nais) |
| 6122 |
JH3A-WL2-DC110V |
JH relay. 30 Amp power relay with space saving design. 3 form A. Coil voltage 110 V DC. 2 coil latching. |
Matsushita Electric Works(Nais) |
| 6123 |
JR1A-TM-AC115V |
JR-relay. Slim type power relay. 1 form A. Coil voltage 115 V AC. TM type. |
Matsushita Electric Works(Nais) |
| 6124 |
JV1A-100V |
JV-relay. Flat type power relay. 1 form A, standard type. Coil voltage 100 V DC. Sealed type. |
Matsushita Electric Works(Nais) |
| 6125 |
JV1AF-100V |
JV-relay. Flat type power relay. 1 form A, standard type. Coil voltage 100 V DC. Flux-resistant type. |
Matsushita Electric Works(Nais) |
| 6126 |
JV1AP-100V |
JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Sealed type. |
Matsushita Electric Works(Nais) |
| 6127 |
JV1APF-100V |
JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Flux-resistant type. |
Matsushita Electric Works(Nais) |
| 6128 |
JVN1A-100V |
JV-N relay. Compact flat power relay for heater loads. 1 form A. Coil voltage 100 V DC. Sealed type. |
Matsushita Electric Works(Nais) |
| 6129 |
JVN1AF-100V |
JV-N relay. Compact flat power relay for heater loads. 1 form A. Coil voltage 100 V DC. Flux-resistant type. |
Matsushita Electric Works(Nais) |
| 6130 |
K101 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 6131 |
K101 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 6132 |
K102 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 6133 |
K102 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 6134 |
K104 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 6135 |
K104 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 6136 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6137 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6138 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6139 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6140 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6141 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6142 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6143 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6144 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6145 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6146 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6147 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6148 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6149 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 6150 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| | | |
