| No. |
Part Name |
Description |
Manufacturer |
| 6271 |
1S6160A |
Silicon power zener diode 160V, ±5% tolerance |
Texas Instruments |
| 6272 |
1S6160R |
Silicon power zener diode 160V, reverse polarity |
Texas Instruments |
| 6273 |
1S6180 |
Silicon power zener diode 180V |
Texas Instruments |
| 6274 |
1S6180A |
Silicon power zener diode 180V, ±5% tolerance |
Texas Instruments |
| 6275 |
1S6180R |
Silicon power zener diode 180V, reverse polarity |
Texas Instruments |
| 6276 |
1S6200 |
Silicon power zener diode 200V |
Texas Instruments |
| 6277 |
1S6200A |
Silicon power zener diode 200V, ±5% tolerance |
Texas Instruments |
| 6278 |
1S6200R |
Silicon power zener diode 200V, reverse polarity |
Texas Instruments |
| 6279 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6280 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6281 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6282 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6283 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6284 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6285 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6286 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6287 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6288 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6289 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6290 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6291 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6292 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6293 |
1SMA4737 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 6294 |
1SMA4738 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 6295 |
1SMA4739 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 6296 |
1SMA4740 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 6297 |
1SMA4741 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 6298 |
1SMA4742 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 6299 |
1SMA4743 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 6300 |
1SMA4744 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
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