No. |
Part Name |
Description |
Manufacturer |
6301 |
K6F4016V6D FAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
6302 |
K6R1004C1D |
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet |
Samsung Electronic |
6303 |
K6R1004V1D |
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM(3.3V Operating) Row Select Data Sheet |
Samsung Electronic |
6304 |
K6T2008V(U)2A FAMILY |
256K x 8 bit Low Power and Low Voltage CMOS Static RAM Data Sheet |
Samsung Electronic |
6305 |
K6T2008V(U)2M FAMILY |
256K x 8 bit Low Power and Low Voltage CMOS Static RAM Data sheet |
Samsung Electronic |
6306 |
K7A401800M |
256K x 18-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) |
Samsung Electronic |
6307 |
K7A401809A |
256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
6308 |
K7A801800M |
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
6309 |
K7A801801M |
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
6310 |
K7A803601M |
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
6311 |
K7B801825M |
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
6312 |
K7B803625M |
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
6313 |
KM41256A |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode |
Samsung Electronic |
6314 |
KM41256AJ-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
6315 |
KM41256AJ-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
6316 |
KM41256AJ-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
6317 |
KM41256AP-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
6318 |
KM41256AP-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
6319 |
KM41256AP-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
6320 |
KM41256AZ-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
6321 |
KM41256AZ-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
6322 |
KM41256AZ-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
6323 |
KM41257A |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode |
Samsung Electronic |
6324 |
KM416C254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
6325 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
6326 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
6327 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
6328 |
KM416C254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
6329 |
KM416C254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
6330 |
KM416C254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
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