| No. |
Part Name |
Description |
Manufacturer |
| 6301 |
2SC5192-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 6302 |
2SC5193 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 6303 |
2SC5193-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 6304 |
2SC5193-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 6305 |
2SC5196 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE . POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6306 |
2SC5197 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6307 |
2SC5198 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6308 |
2SC5199 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6309 |
2SC519A |
Industrial Transistor Specification Table |
TOSHIBA |
| 6310 |
2SC5200 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6311 |
2SC5200N |
Power transistor for high-speed switching applications |
TOSHIBA |
| 6312 |
2SC5201 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS. |
TOSHIBA |
| 6313 |
2SC520A |
Industrial Transistor Specification Table |
TOSHIBA |
| 6314 |
2SC520A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 6315 |
2SC520A |
High-Frequency Transistor SW BAND |
TOSHIBA |
| 6316 |
2SC5216 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 6317 |
2SC521A |
Industrial Transistor Specification Table |
TOSHIBA |
| 6318 |
2SC521A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 6319 |
2SC521A |
High-Frequency Transistor SW BAND |
TOSHIBA |
| 6320 |
2SC522 |
Industrial Transistor Specification Table |
TOSHIBA |
| 6321 |
2SC5226 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
SANYO |
| 6322 |
2SC5227 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
SANYO |
| 6323 |
2SC5228 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
SANYO |
| 6324 |
2SC5229 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
SANYO |
| 6325 |
2SC523 |
Industrial Transistor Specification Table |
TOSHIBA |
| 6326 |
2SC5230 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
SANYO |
| 6327 |
2SC5231 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
SANYO |
| 6328 |
2SC5232 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 6329 |
2SC5233 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 6330 |
2SC524 |
Industrial Transistor Specification Table |
TOSHIBA |
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