No. |
Part Name |
Description |
Manufacturer |
6301 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
6302 |
AM82325-040 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
6303 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
6304 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
6305 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
6306 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
6307 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
6308 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
6309 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
6310 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
6311 |
AM82931-055 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
6312 |
AM82931-055N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
6313 |
AM82931-055S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
6314 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
6315 |
AM9789 |
SINGLE PHASE FULL-WAVE MOTOR DRIVER FOR SILENT FAN MOTOR |
Diodes |
6316 |
AM9789M8TR-G1 |
SINGLE PHASE FULL-WAVE MOTOR DRIVER FOR SILENT FAN MOTOR |
Diodes |
6317 |
AMC1100 |
4.25kVPEAK Isolated Amplifier for e-metering |
Texas Instruments |
6318 |
AMC1100DUB |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
6319 |
AMC1100DUBR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
6320 |
AMC1100DWV |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 |
Texas Instruments |
6321 |
AMC1100DWVR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 |
Texas Instruments |
6322 |
AMC1200 |
4.25kV peak Isolated Amplifier for Current Shunt Measurements |
Texas Instruments |
6323 |
AMC1200-Q1 |
Automotive Catalog, 4kV peak Isolated Amplifier for Current Shunt Measurements |
Texas Instruments |
6324 |
AMC1200BDUB |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
6325 |
AMC1200BDUBR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
6326 |
AMC1200BDWV |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 |
Texas Instruments |
6327 |
AMC1200BDWVR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 |
Texas Instruments |
6328 |
AMC1200SDUB |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
6329 |
AMC1200SDUBR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
6330 |
AMC1200STDUBRQ1 |
Automotive Catalog, 4kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
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