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Datasheets for FOR

Datasheets found :: 81458
Page: | 207 | 208 | 209 | 210 | 211 | 212 | 213 | 214 | 215 |
No. Part Name Description Manufacturer
6301 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
6302 AM82325-040 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
6303 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6304 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6305 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6306 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6307 AM82729-030 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
6308 AM82729-060 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
6309 AM82731-001 Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
6310 AM82731-075 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
6311 AM82931-055 High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
6312 AM82931-055N High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
6313 AM82931-055S High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
6314 AM83135-003 Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
6315 AM9789 SINGLE PHASE FULL-WAVE MOTOR DRIVER FOR SILENT FAN MOTOR Diodes
6316 AM9789M8TR-G1 SINGLE PHASE FULL-WAVE MOTOR DRIVER FOR SILENT FAN MOTOR Diodes
6317 AMC1100 4.25kVPEAK Isolated Amplifier for e-metering Texas Instruments
6318 AMC1100DUB 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 Texas Instruments
6319 AMC1100DUBR 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 Texas Instruments
6320 AMC1100DWV 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 Texas Instruments
6321 AMC1100DWVR 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 Texas Instruments
6322 AMC1200 4.25kV peak Isolated Amplifier for Current Shunt Measurements Texas Instruments
6323 AMC1200-Q1 Automotive Catalog, 4kV peak Isolated Amplifier for Current Shunt Measurements Texas Instruments
6324 AMC1200BDUB 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 Texas Instruments
6325 AMC1200BDUBR 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 Texas Instruments
6326 AMC1200BDWV 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 Texas Instruments
6327 AMC1200BDWVR 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 Texas Instruments
6328 AMC1200SDUB 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 Texas Instruments
6329 AMC1200SDUBR 4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 Texas Instruments
6330 AMC1200STDUBRQ1 Automotive Catalog, 4kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 Texas Instruments


Datasheets found :: 81458
Page: | 207 | 208 | 209 | 210 | 211 | 212 | 213 | 214 | 215 |



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