| No. |
Part Name |
Description |
Manufacturer |
| 6301 |
UF4001 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6302 |
UF4001-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=50V, VR=50V, IO=1A |
Comchip Technology |
| 6303 |
UF4002 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6304 |
UF4002-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=100V, VR=100V, IO=1A |
Comchip Technology |
| 6305 |
UF4003 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6306 |
UF4003-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=200V, VR=200V, IO=1A |
Comchip Technology |
| 6307 |
UF4004 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6308 |
UF4004-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=400V, VR=400V, IO=1A |
Comchip Technology |
| 6309 |
UF4005 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6310 |
UF4005-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=600V, VR=600V, IO=1A |
Comchip Technology |
| 6311 |
UF4006 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6312 |
UF4006-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=800V, VR=800V, IO=1A |
Comchip Technology |
| 6313 |
UF4007 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6314 |
UF4007-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=1000V, VR=1000V, IO=1A |
Comchip Technology |
| 6315 |
UG2JA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6316 |
UG301 |
50V; 3.0A ultra-fast recovery glass passivated rectifier; ultra fast switching for high efficiency |
Diodes |
| 6317 |
UG302 |
100V; 3.0A ultra-fast recovery glass passivated rectifier; ultra fast switching for high efficiency |
Diodes |
| 6318 |
UG303 |
200V; 3.0A ultra-fast recovery glass passivated rectifier; ultra fast switching for high efficiency |
Diodes |
| 6319 |
UG304 |
400V; 3.0A ultra-fast recovery glass passivated rectifier; ultra fast switching for high efficiency |
Diodes |
| 6320 |
UG305 |
600V; 3.0A ultra-fast recovery glass passivated rectifier; ultra fast switching for high efficiency |
Diodes |
| 6321 |
UGF1004GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6322 |
UGF1005GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6323 |
UGF1006GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6324 |
UGF1007GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6325 |
UGF1008GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6326 |
US1A |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6327 |
US1B |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6328 |
US1D |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6329 |
US1G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6330 |
US1J |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
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