| No. |
Part Name |
Description |
Manufacturer |
| 6301 |
HM5112805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 6302 |
HM5112805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 6303 |
HM5113805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 6304 |
HM5113805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 6305 |
HM5113805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 6306 |
HM5116100 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
| 6307 |
HM5116100S |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
| 6308 |
HM5116100S-6 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
| 6309 |
HM5116100S-7 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
| 6310 |
HM51258P |
262144 word x 1 Bit Static Column CMOS DRAM |
Hitachi Semiconductor |
| 6311 |
HM514100DLS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
| 6312 |
HM514100DLS-7 |
4,194,304-word x 1-bit dynamic RAM, 70ns |
Hitachi Semiconductor |
| 6313 |
HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
| 6314 |
HM514100DS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
| 6315 |
HM514100DS-7 |
4,194,304-word x 1-bit dynamic RAM, 70ns |
Hitachi Semiconductor |
| 6316 |
HM514100DS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
| 6317 |
HM514258AJP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6318 |
HM514258AJP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6319 |
HM514258AJP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6320 |
HM514258AJP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6321 |
HM514258AJP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6322 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6323 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6324 |
HM514258AP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6325 |
HM514258AP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6326 |
HM514258AP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6327 |
HM514258AZP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6328 |
HM514258AZP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6329 |
HM514258AZP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6330 |
HM514258AZP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
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