No. |
Part Name |
Description |
Manufacturer |
6301 |
BD798 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. |
General Electric Solid State |
6302 |
BD798 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
6303 |
BD799 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. |
General Electric Solid State |
6304 |
BD799 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
6305 |
BD800 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. |
General Electric Solid State |
6306 |
BD800 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
6307 |
BD801 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W. |
General Electric Solid State |
6308 |
BD801 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
6309 |
BD802 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -100V, 65W. |
General Electric Solid State |
6310 |
BD802 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
6311 |
BD905 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
6312 |
BD906 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
6313 |
BD907 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
6314 |
BD907 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
6315 |
BD908 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
6316 |
BD908 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
6317 |
BD909 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
6318 |
BD909 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
6319 |
BD910 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
6320 |
BD910 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
6321 |
BD911 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
6322 |
BD911 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
6323 |
BD912 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
6324 |
BD912 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
6325 |
BDS10 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
SemeLAB |
6326 |
BDS10IG |
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE |
SemeLAB |
6327 |
BDS10SMD |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
SemeLAB |
6328 |
BDS11 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
SemeLAB |
6329 |
BDS11IG |
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE |
SemeLAB |
6330 |
BDS11SMD |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
SemeLAB |
| | | |