| No. |
Part Name |
Description |
Manufacturer |
| 6301 |
2SC5181 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6302 |
2SC5181-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6303 |
2SC5182 |
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6304 |
2SC5182-T1 |
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6305 |
2SC5182-T2 |
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6306 |
2SC5183 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6307 |
2SC5183-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6308 |
2SC5183-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6309 |
2SC5184 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6310 |
2SC5184-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6311 |
2SC5184-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6312 |
2SC5185 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6313 |
2SC5185-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6314 |
2SC5185-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6315 |
2SC5186 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6316 |
2SC5186-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6317 |
2SC5190 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 6318 |
2SC5192 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 6319 |
2SC5192-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 6320 |
2SC5192-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 6321 |
2SC5193 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 6322 |
2SC5193-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 6323 |
2SC5193-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 6324 |
2SC5196 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE . POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6325 |
2SC5197 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6326 |
2SC5198 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6327 |
2SC5199 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6328 |
2SC519A |
Industrial Transistor Specification Table |
TOSHIBA |
| 6329 |
2SC5200 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6330 |
2SC5200N |
Power transistor for high-speed switching applications |
TOSHIBA |
| | | |
