| No. |
Part Name |
Description |
Manufacturer |
| 6301 |
BD53E55G-M |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6302 |
BD53E55G-MTR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6303 |
BD53E55G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6304 |
BD53E56G |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6305 |
BD53E56G-M |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6306 |
BD53E56G-MTR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6307 |
BD53E56G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6308 |
BD53E57G |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6309 |
BD53E57G-M |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6310 |
BD53E57G-MTR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6311 |
BD53E57G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6312 |
BD53E58G |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6313 |
BD53E58G-M |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6314 |
BD53E58G-MTR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6315 |
BD53E58G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6316 |
BD53E59G |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6317 |
BD53E59G-M |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6318 |
BD53E59G-MTR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6319 |
BD53E59G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6320 |
BD53E60G |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6321 |
BD53E60G-M |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6322 |
BD53E60G-MTR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6323 |
BD53E60G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
| 6324 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 6325 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 6326 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 6327 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 6328 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 6329 |
BFR94 |
NPN resistance-stabilizer transistor in a SOT-48 capstan envelope, very low cross modulation, intermodulation and second harmonic distortion |
Philips |
| 6330 |
BFR95 |
NPN resistance stabilized transistor in a TO-39 metal anvelope |
Philips |
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