| No. |
Part Name |
Description |
Manufacturer |
| 631 |
MZT4550 |
50 watt zener transient suppressor. Nom zener voltage 4.3 V. |
Motorola |
| 632 |
NE56632-43D |
Active-LOW system reset with adjustable delay time, 4.3V |
Philips |
| 633 |
NEZ3642-4DD |
3.6GHz to 4.3GHz high output amplifier |
NEC |
| 634 |
NTE5008SM |
Zener diode, 300watt, + - 5 % tolerance. Nominal zener voltage Vz = 4.3V, Zener test current Izt = 5mA. |
NTE Electronics |
| 635 |
NTE5114A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Test current Izt = 290mA. |
NTE Electronics |
| 636 |
NTE5175A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Zener test current Izt = 580mA. |
NTE Electronics |
| 637 |
NTE5241AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Zener test current Izt = 2900mA. |
NTE Electronics |
| 638 |
NTLJD2104P |
Power MOSFET, 12V, 4.3A, 90mOhm Dual P Channel WDFN2x2 |
ON Semiconductor |
| 639 |
NTLJD2105L |
Power MOSFET, 8 V, 4.3 A, µCool™ High Side Load Switch with Level Shift |
ON Semiconductor |
| 640 |
PBSS4021NT |
20 V, 4.3 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 641 |
PBSS4021NT |
20 V, 4.3 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 642 |
PL4V3Z |
Silicon zener diode 1W 4.3V - epoxy case |
IPRS Baneasa |
| 643 |
PL4V3Z |
1W 4.3V Voltage Regulator Diode |
IPRS Baneasa |
| 644 |
PSMN3R9-100YSF |
NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package |
Nexperia |
| 645 |
PSMN4R1-30YLC |
N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology |
Nexperia |
| 646 |
PSMN4R1-30YLC |
N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
| 647 |
PSMN4R3-100ES |
N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK |
Nexperia |
| 648 |
PSMN4R3-100ES |
N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK |
NXP Semiconductors |
| 649 |
PSMN4R3-100PS |
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 |
Nexperia |
| 650 |
PSMN4R3-100PS |
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 |
NXP Semiconductors |
| 651 |
PSMN4R3-30PL |
N-channel 30 V 4.3 mΩ logic level MOSFET |
Nexperia |
| 652 |
PSMN4R3-30PL |
N-channel 30 V 4.3 mΩ logic level MOSFET |
NXP Semiconductors |
| 653 |
PSMN4R3-80BS |
N-channel 80 V, 4.3 mΩ standard level MOSFET in D2PAK |
NXP Semiconductors |
| 654 |
PSMN4R3-80ES |
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK |
Nexperia |
| 655 |
PSMN4R3-80ES |
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK |
NXP Semiconductors |
| 656 |
PSMN4R3-80PS |
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 |
Nexperia |
| 657 |
PSMN4R3-80PS |
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 |
NXP Semiconductors |
| 658 |
R1112N43A-TL |
Low noise 150mA LDO regulator. Output voltage 4.3V. Active low type. Taping type TL |
Ricoh |
| 659 |
R1112N43A-TR |
Low noise 150mA LDO regulator. Output voltage 4.3V. Active low type. Standard taping type TR |
Ricoh |
| 660 |
R1112N43B-TL |
Low noise 150mA LDO regulator. Output voltage 4.3V. Active high type. Taping type TL |
Ricoh |
| | | |
