No. |
Part Name |
Description |
Manufacturer |
631 |
2722 162 01131 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
632 |
2722 162 01141 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
633 |
2722 162 03141 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
634 |
2722 162 03151 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
635 |
2722 162 03191 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
636 |
2722 162 03201 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
637 |
2722 162 03211 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
638 |
2722 162 03221 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
639 |
2722 162 03231 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
640 |
2722 162 03241 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
641 |
2722 162 03251 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
642 |
2722 162 05371 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
643 |
2722 162 05381 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
644 |
2722 162 05391 |
BAND IV/V CIRCULATORS 500 AND 700W |
Philips |
645 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
646 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
647 |
2N5172 |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE |
Continental Device India Limited |
648 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
649 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
650 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
651 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
652 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
653 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
654 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
655 |
2PB710ARL |
50 V, 500 mA PNP general-purpose transistors |
Nexperia |
656 |
2PB710ARL |
50 V, 500 mA PNP general-purpose transistors |
NXP Semiconductors |
657 |
2PB710ASL |
50 V, 500 mA PNP general-purpose transistors |
Nexperia |
658 |
2PB710ASL |
50 V, 500 mA PNP general-purpose transistors |
NXP Semiconductors |
659 |
2PD602AQL |
50 V, 500 mA NPN general-purpose transistors |
Nexperia |
660 |
2PD602AQL |
50 V, 500 mA NPN general-purpose transistors |
NXP Semiconductors |
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