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Datasheets for 500

Datasheets found :: 3486
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No. Part Name Description Manufacturer
631 2722 162 01131 BAND IV/V CIRCULATORS 500 AND 700W Philips
632 2722 162 01141 BAND IV/V CIRCULATORS 500 AND 700W Philips
633 2722 162 03141 BAND IV/V CIRCULATORS 500 AND 700W Philips
634 2722 162 03151 BAND IV/V CIRCULATORS 500 AND 700W Philips
635 2722 162 03191 BAND IV/V CIRCULATORS 500 AND 700W Philips
636 2722 162 03201 BAND IV/V CIRCULATORS 500 AND 700W Philips
637 2722 162 03211 BAND IV/V CIRCULATORS 500 AND 700W Philips
638 2722 162 03221 BAND IV/V CIRCULATORS 500 AND 700W Philips
639 2722 162 03231 BAND IV/V CIRCULATORS 500 AND 700W Philips
640 2722 162 03241 BAND IV/V CIRCULATORS 500 AND 700W Philips
641 2722 162 03251 BAND IV/V CIRCULATORS 500 AND 700W Philips
642 2722 162 05371 BAND IV/V CIRCULATORS 500 AND 700W Philips
643 2722 162 05381 BAND IV/V CIRCULATORS 500 AND 700W Philips
644 2722 162 05391 BAND IV/V CIRCULATORS 500 AND 700W Philips
645 2N2906A hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA SGS Thomson Microelectronics
646 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
647 2N5172 0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE Continental Device India Limited
648 2N5232 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
649 2N5232A 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
650 2N6074 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
651 2N6074A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
652 2N6074B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
653 2N6531 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. General Electric Solid State
654 2N7228 POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm Advanced Power Technology
655 2PB710ARL 50 V, 500 mA PNP general-purpose transistors Nexperia
656 2PB710ARL 50 V, 500 mA PNP general-purpose transistors NXP Semiconductors
657 2PB710ASL 50 V, 500 mA PNP general-purpose transistors Nexperia
658 2PB710ASL 50 V, 500 mA PNP general-purpose transistors NXP Semiconductors
659 2PD602AQL 50 V, 500 mA NPN general-purpose transistors Nexperia
660 2PD602AQL 50 V, 500 mA NPN general-purpose transistors NXP Semiconductors


Datasheets found :: 3486
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