No. |
Part Name |
Description |
Manufacturer |
631 |
2SK608 |
Silicon N Channel Junction Type |
Panasonic |
632 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
633 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
634 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
635 |
2SK808 |
Silicon N Channel Power FMOS FET |
Panasonic |
636 |
2SK829 |
FAST SWITCHING N CHANNEL SILICON POWER MOSFET |
NEC |
637 |
2SK855 |
FAST SWITCHING N CHANNEL SILICON POWER MOSFET |
NEC |
638 |
2SK879 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
639 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
640 |
2SK881 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
641 |
2SK882 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
TOSHIBA |
642 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
643 |
2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
644 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
645 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
646 |
3SK0139 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
647 |
3SK0169 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
648 |
3SK0192 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
649 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
650 |
3SK186 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
651 |
3SK195 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications FM Tuner Applications |
TOSHIBA |
652 |
3SK199 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications |
TOSHIBA |
653 |
3SK202 |
Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification |
Panasonic |
654 |
3SK207 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
655 |
3SK225 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
656 |
3SK226 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications FM Tuner Applications |
TOSHIBA |
657 |
3SK232 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
658 |
3SK249 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
659 |
3SK256 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
660 |
3SK290 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
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