| No. |
Part Name |
Description |
Manufacturer |
| 631 |
MCR3935-3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 35 A RMS. Peak repetitive forward and reverse blocking voltage 100 V. |
Motorola |
| 632 |
MCR3935-4 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 35 A RMS. Peak repetitive forward and reverse blocking voltage 200 V. |
Motorola |
| 633 |
MCR3935-6 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 35 A RMS. Peak repetitive forward and reverse blocking voltage 400 V. |
Motorola |
| 634 |
MCR3935-8 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 35 A RMS. Peak repetitive forward and reverse blocking voltage 600 V. |
Motorola |
| 635 |
MJE13002 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE. |
Continental Device India Limited |
| 636 |
MJE13004 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 4.000A Ic, 10 - 60 hFE. |
Continental Device India Limited |
| 637 |
MJE13006 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 8.000A Ic, 8 - 60 hFE. |
Continental Device India Limited |
| 638 |
MJE340 |
20.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE350 |
Continental Device India Limited |
| 639 |
MJE350 |
20.000W Switching PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE340 |
Continental Device India Limited |
| 640 |
MK4027J-1 |
4096x1-bit dynamic RAM, 120ns acces time. 320ns cycle. |
Mostek |
| 641 |
MK4027N-1 |
4096x1-bit dynamic RAM, 120ns acces time. 320ns cycle. |
Mostek |
| 642 |
MM74C373M |
3-STATE Octal D-Type Latch . 3-STATE Octal D-Type Flip-Flop |
Fairchild Semiconductor |
| 643 |
MM74C374M |
3-STATE Octal D-Type Latch . 3-STATE Octal D-Type Flip-Flop |
Fairchild Semiconductor |
| 644 |
MMBZ5226B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.3 V. Test current 20.0 mA. |
Chenyi Electronics |
| 645 |
MMBZ5227B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.6 V. Test current 20.0 mA. |
Chenyi Electronics |
| 646 |
MMBZ5228B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.9 V. Test current 20.0 mA. |
Chenyi Electronics |
| 647 |
MMBZ5229B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA. |
Chenyi Electronics |
| 648 |
MMBZ5230B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.7 V. Test current 20.0 mA. |
Chenyi Electronics |
| 649 |
MMBZ5231B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.1 V. Test current 20.0 mA. |
Chenyi Electronics |
| 650 |
MMBZ5232B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.6 V. Test current 20.0 mA. |
Chenyi Electronics |
| 651 |
MMBZ5233B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.0 V. Test current 20.0 mA. |
Chenyi Electronics |
| 652 |
MMBZ5234B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA. |
Chenyi Electronics |
| 653 |
MMBZ5235B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.8 V. Test current 20.0 mA. |
Chenyi Electronics |
| 654 |
MMBZ5236B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA. |
Chenyi Electronics |
| 655 |
MMBZ5237B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.2 V. Test current 20.0 mA. |
Chenyi Electronics |
| 656 |
MMBZ5238B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.7 V. Test current 20.0 mA. |
Chenyi Electronics |
| 657 |
MMBZ5239B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 9.1 V. Test current 20.0 mA. |
Chenyi Electronics |
| 658 |
MMBZ5240B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA. |
Chenyi Electronics |
| 659 |
MMBZ5241B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 11 V. Test current 20.0 mA. |
Chenyi Electronics |
| 660 |
MMBZ5242B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 12.0 V. Test current 20.0 mA. |
Chenyi Electronics |
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