| No. |
Part Name |
Description |
Manufacturer |
| 631 |
1MBI200L-120 |
IGBT module for motor drive inverter, AC and DC servo drive amplifier applications |
COLLMER SEMICONDUCTOR INC |
| 632 |
1MBI200L-120 |
IGBT MODULE(L series) |
Fuji Electric |
| 633 |
1MBI200N-120 |
IGBT MODULE |
Fuji Electric |
| 634 |
1MBI200NA-120 |
IGBT MODULE ( N series ) |
Fuji Electric |
| 635 |
1MBI200NH-060 |
IGBT MODULE ( N series ) |
Fuji Electric |
| 636 |
1MBI200NK-060 |
IGBT MODULE ( N series ) |
Fuji Electric |
| 637 |
1MBI300S-120 |
1-Pack IGBT 1200V 1x300A |
Fujitsu Microelectronics |
| 638 |
1N1031 |
Silicon Rectifier Diode 200V |
Motorola |
| 639 |
1N1037 |
Silicon Rectifier Diode 200V 0.5A |
Motorola |
| 640 |
1N1043 |
Silicon Rectifier Diode 200V 0.5A |
Motorola |
| 641 |
1N1049 |
Silicon Rectifier Diode 200V 0.5A |
Motorola |
| 642 |
1N1055 |
Silicon Rectifier Diode 200V 0.5A |
Motorola |
| 643 |
1N1061 |
Silicon Rectifier Diode 200V 1.5A |
Motorola |
| 644 |
1N1067 |
Silicon Rectifier Diode 200V 1.5A |
Motorola |
| 645 |
1N1073 |
Silicon Rectifier Diode 200V 1.5A |
Motorola |
| 646 |
1N1079 |
Silicon Rectifier Diode 200V 5A |
Motorola |
| 647 |
1N1082 |
Silicon Rectifier Diode 200V |
Motorola |
| 648 |
1N1116 |
Diffused Silicon Rectifier 2.5A 200V |
Texas Instruments |
| 649 |
1N1116R |
Diffused Silicon Rectifier 2.5A 200V, reverse polarity |
Texas Instruments |
| 650 |
1N1124 |
Diffused Silicon Rectifier 3A 200V |
Texas Instruments |
| 651 |
1N1124A |
200 V, 3 A standard recovery rectifier |
Solid State Devices Inc |
| 652 |
1N1124A |
Diffused Silicon Rectifier 3.3A 200V |
Texas Instruments |
| 653 |
1N1124AR |
Diffused Silicon Rectifier 3.3A 200V, reverse polarity |
Texas Instruments |
| 654 |
1N1124R |
Diffused Silicon Rectifier 3A 200V, reverse polarity |
Texas Instruments |
| 655 |
1N1186 |
200V 35A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
| 656 |
1N1186 |
Silicon Diode Rectifier, cathode connected to case, 35A 200V |
Motorola |
| 657 |
1N1186 |
Diode Switching 200V 35A 2-Pin DO-5 |
New Jersey Semiconductor |
| 658 |
1N1186 |
200 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
| 659 |
1N1186A |
200V 40A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
| 660 |
1N1186A |
Diode Switching 200V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
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