No. |
Part Name |
Description |
Manufacturer |
631 |
IR21368 |
3 Phase Driver, Soft Turn-on, Inverting Input Separate High and Low Side Inputs, 200ns Deadtime in a 28-pin DIP package |
International Rectifier |
632 |
IR21368J |
3 Phase Driver, Soft Turn-on, Inverting Input Separate High and Low Side Inputs, 200ns Deadtime in a mod. 44-lead PLCC package |
International Rectifier |
633 |
IR21368JPBF |
3 Phase Driver, Soft Turn-on, Inverting Input Separate High and Low Side Inputs, 200ns Deadtime in a mod. 44-lead PLCC package |
International Rectifier |
634 |
IR21368PBF |
3 Phase Driver, Soft Turn-on, Inverting Input Separate High and Low Side Inputs, 200ns Deadtime in a 28-pin DIP package |
International Rectifier |
635 |
IR21368S |
3 Phase Driver, Soft Turn-on, Inverting Input Separate High and Low Side Inputs, 200ns Deadtime in a 28-lead SOIC package |
International Rectifier |
636 |
IR21368SPBF |
3 Phase Driver, Soft Turn-on, Inverting Input Separate High and Low Side Inputs, 200ns Deadtime in a 28-lead SOIC package |
International Rectifier |
637 |
IRFP4368 |
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
638 |
IRFP4368PBF |
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
639 |
ISL43681 |
Low-Voltage, Single and Dual Supply, 8 to 1 Multiplexer |
Intersil |
640 |
ISL43681IR |
Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer and Differential 4 to 1 Multiplexer |
Intersil |
641 |
ISL6334AR5368 |
VR11.1, 4-Phase PWM Controller with Light Load Efficiency Enhancement and Load Current Monitoring Features |
Intersil |
642 |
JAN2N7368 |
NPN Transistor |
Microsemi |
643 |
JANTX2N7368 |
NPN Transistor |
Microsemi |
644 |
JANTXV2N7368 |
NPN Transistor |
Microsemi |
645 |
K7A163680A, K7A163280A, K7A161880A |
512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
646 |
K7I163682B |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
647 |
K7I163682B-FC16 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
648 |
K7I163682B-FC20 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
649 |
K7I163682B-FC25 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
650 |
K7I163682B-FC30 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
651 |
K7I323682M |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM |
Samsung Electronic |
652 |
K7I323682M K7I321882M K7I320882M |
1Mx36 & 2Mx18 & 4Mx8 DDRII CIO b2 SRAM Data Sheet |
Samsung Electronic |
653 |
K7I323682M K7I321882M K7I320882M |
1Mx36 & 2Mx18 & 4Mx8 DDRII CIO b2 SRAM Data Sheet |
Samsung Electronic |
654 |
K7I323684M, K7I321884M, K7I320884M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDRII CIO b4 SRAM Data Sheet |
Samsung Electronic |
655 |
K7J163682B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM |
Samsung Electronic |
656 |
K7J323682M |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM |
Samsung Electronic |
657 |
K7Q163682A |
512Kx36 & 1Mx18 QDR b2 SRAM |
Samsung Electronic |
658 |
K7Q323682M, K7Q321882M |
1Mx36-bit, 2Mx18-bit QDR� SRAM Data Sheet |
Samsung Electronic |
659 |
K7Q323684M, K7Q321884M |
1Mx36 & 2Mx18 QDR� b4 SRAM Data Sheet |
Samsung Electronic |
660 |
K7R163682B |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM |
Samsung Electronic |
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