No. |
Part Name |
Description |
Manufacturer |
631 |
2N5406 |
Trans GP BJT PNP 80V 5A 3-Pin TO-5 |
New Jersey Semiconductor |
632 |
2N5406 |
SMALL SIGNAL PNP TRANSISTORS IN TO-5 |
SemeLAB |
633 |
2N5407 |
Silicon PNP Transistor |
Motorola |
634 |
2N5407 |
Trans GP BJT PNP 100V 5A 3-Pin TO-5 |
New Jersey Semiconductor |
635 |
2N5407 |
SMALL SIGNAL PNP TRANSISTORS IN TO-5 |
SemeLAB |
636 |
2N5408 |
Silicon PNP Transistor |
Motorola |
637 |
2N5409 |
Silicon PNP Transistor |
Motorola |
638 |
2N540A |
Germanium PNP Transistor |
Motorola |
639 |
2N540A |
Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
640 |
2N540A |
Germanium PNP Power Transistor, TO-10 Package |
Silicon Transistor Corporation |
641 |
2N5540 |
Silicon NPN Power Transistor, TO-61 package |
Silicon Transistor Corporation |
642 |
2SA1540 |
PNP Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications |
SANYO |
643 |
2SC2540 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
644 |
2SC3540 |
Silicon NPN Power Transistors TO-220Fa package |
Savantic |
645 |
2SC4540 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
646 |
2SC540 |
Silicon NPN Transistor |
COMPELEC |
647 |
2SC5404 |
Silicon NPN Power Transistors TO-3P(H)IS package |
Savantic |
648 |
2SC5404 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
649 |
2SC5405 |
Silicon NPN triple diffusion planar type |
Panasonic |
650 |
2SC5406 |
Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
Panasonic |
651 |
2SC5406A |
Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
Panasonic |
652 |
2SC5407 |
Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
Panasonic |
653 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
654 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
655 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
656 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
657 |
2SC5540 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications |
SANYO |
658 |
2SJ540 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
659 |
2SJ540 |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
660 |
2SJ540 |
Transistors>Switching/MOSFETs |
Renesas |
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