No. |
Part Name |
Description |
Manufacturer |
631 |
SN74S37NSR |
Quad 2-input positive-NAND buffers |
Texas Instruments |
632 |
SN751177NS |
DUAL DIFFERENTIAL DRIVER/RECEIVER PAIRS |
Texas Instruments |
633 |
SN751177NSR |
Dual Differential Driver/Receiver Pairs |
Texas Instruments |
634 |
SN751177NSRE4 |
Dual Differential Driver/Receiver Pairs 16-SO -20 to 85 |
Texas Instruments |
635 |
SN751177NSRG4 |
Dual Differential Driver/Receiver Pairs 16-SO -20 to 85 |
Texas Instruments |
636 |
SN75ALS1177NS |
DUAL DIFFERENTIAL DRIVERS AND RECEIVERS |
Texas Instruments |
637 |
SN75ALS1177NSLE |
Dual Differential Drivers And Receivers |
Texas Instruments |
638 |
SN75ALS1177NSR |
Dual Differential Drivers And Receivers |
Texas Instruments |
639 |
SN75ALS1177NSRE4 |
Dual Differential Drivers And Receivers 16-SO 0 to 70 |
Texas Instruments |
640 |
SN75ALS197NS |
QUADRUPLE DIFFERENTIAL LINE RECEIVER |
Texas Instruments |
641 |
SN75ALS197NSR |
Quadruple Differential Line Receiver |
Texas Instruments |
642 |
SN75C1167NS |
DUAL DIFFERENTIAL DRIVERS AND RECEIVERS |
Texas Instruments |
643 |
SN75C1167NSLE |
Dual Differential Drivers And Receivers |
Texas Instruments |
644 |
SN75C1167NSR |
Dual Differential Drivers And Receivers |
Texas Instruments |
645 |
SN75C1167NSRG4 |
Dual Differential Drivers And Receivers 16-SO 0 to 70 |
Texas Instruments |
646 |
STD7NS20 |
N - CHANNEL 200V - 0.35 Ohm - 7A - DPAK MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
647 |
STD7NS20 |
N-CHANNEL 200V - 0.35 OHM - 7A - DPAK/IPAK MESH OVERLAY MOSFET |
ST Microelectronics |
648 |
STD7NS20-1 |
N-CHANNEL 200V - 0.35 OHM - 7A - DPAK/IPAK MESH OVERLAY MOSFET |
ST Microelectronics |
649 |
STD7NS20T4 |
N-CHANNEL 200V - 0.35 OHM - 7A - DPAK/IPAK MESH OVERLAY MOSFET |
ST Microelectronics |
650 |
T431616A-7C |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
651 |
T431616A-7CI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
652 |
T431616A-7S |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
653 |
T431616A-7SI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
654 |
TC55328J-17 |
17ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
655 |
TC55328P-17 |
17ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
656 |
V54C3128164VB7 |
8Mbit x 16 SDRAM, 3.3V, LVTTL, 7ns |
Mosel Vitelic Corp |
657 |
V54C3128404VB7 |
32Mbit x 4 SDRAM, 3.3V, LVTTL, 7ns |
Mosel Vitelic Corp |
658 |
V54C3128804VB7 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 7ns |
Mosel Vitelic Corp |
659 |
V54C3256164VBLC7 |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns |
Mosel Vitelic Corp |
660 |
V54C3256164VBLC7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns |
Mosel Vitelic Corp |
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