| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2N6349A |
12-A silicon triac. 800 V. |
General Electric Solid State |
| 632 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
| 633 |
2N6394 |
12A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
| 634 |
2N6395 |
12A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
| 635 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
| 636 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
| 637 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
| 638 |
2N6569 |
12A Power Transistor NPN Silicon 40V 100W |
Motorola |
| 639 |
2N6594 |
12 Ampere 100W POWER PNP silicon transistor 40V |
Motorola |
| 640 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 641 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
| 642 |
2N7228 |
12A N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 643 |
2SA747 |
120V PNP silicon transistor |
Sanken |
| 644 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 645 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 646 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 647 |
300U120AD |
1200V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 648 |
301U120 |
1200V 330A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 649 |
30CPF12 |
1200V Fast Recovery Diode in a TO-247AC package |
International Rectifier |
| 650 |
30EPF12 |
1200V Fast Recovery Diode in a TO-247AC (2-Pin) package |
International Rectifier |
| 651 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 652 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 653 |
30TPS12 |
1200V 20A Phase Control SCR in a TO-247AC package |
International Rectifier |
| 654 |
36MB120A |
1200V Bridge in a D-34A package |
International Rectifier |
| 655 |
36MT120 |
1200V 3 Phase Bridge in a D-63 package |
International Rectifier |
| 656 |
37LV128-I_L |
128K EPROM |
Microchip |
| 657 |
37LV128-I_P |
128K EPROM |
Microchip |
| 658 |
37LV128-I_SN |
128K EPROM |
Microchip |
| 659 |
37LV128-TI_L |
128K EPROM |
Microchip |
| 660 |
37LV128-TI_P |
128K EPROM |
Microchip |
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