No. |
Part Name |
Description |
Manufacturer |
631 |
STPSC8H065 |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
632 |
STPSC8H065B-TR |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
633 |
STPSC8H065C |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
634 |
STPSC8H065CT |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
635 |
STPSC8H065D |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
636 |
STPSC8H065DI |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
637 |
STPSC8H065G-TR |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
638 |
TC511664B |
65536 word x 16 bit DRAM |
TOSHIBA |
639 |
TC551664AJ |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
640 |
TC551664AJ-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
641 |
TC551664AJ-20 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
642 |
TC551664BFT-12 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
643 |
TC551664BFT-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
644 |
TC551664BJ |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
645 |
TC551664BJ-12 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
646 |
TC551664BJ-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
647 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
648 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
649 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
650 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
651 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
652 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
653 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
654 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
655 |
TC55V16648BBFT-10 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
656 |
TC55V16648BBFT-12 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
657 |
TC55V16648BBFT-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
658 |
TC55V16648BJ |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
659 |
TC55V16648BJ-10 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
660 |
TC55V16648BJ-12 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
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