| No. |
Part Name |
Description |
Manufacturer |
| 631 |
DZG6 |
Dioda germanowa prostownicza |
Ultra CEMI |
| 632 |
DZG7 |
Dioda germanowa prostownicza |
Ultra CEMI |
| 633 |
EM050G |
1A GLASS RECTIFIER |
ITT Semiconductors |
| 634 |
EM501G |
1A GLASS RECTIFIER |
ITT Semiconductors |
| 635 |
EM502G |
1A GLASS RECTIFIER |
ITT Semiconductors |
| 636 |
EM504G |
1A GLASS RECTIFIER |
ITT Semiconductors |
| 637 |
EM506G |
1A GLASS RECTIFIER |
ITT Semiconductors |
| 638 |
EM508G |
1A GLASS RECTIFIER |
ITT Semiconductors |
| 639 |
EM510G |
1A GLASS RECTIFIER |
ITT Semiconductors |
| 640 |
FAN6749 |
Highly Integrated Ultra Green-Mode PWM Controller |
Fairchild Semiconductor |
| 641 |
FM401 |
1A GLASS PASSIVATED SMA DIODES |
Leshan Radio Company |
| 642 |
FM402 |
1A GLASS PASSIVATED SMA DIODES |
Leshan Radio Company |
| 643 |
FM403 |
1A GLASS PASSIVATED SMA DIODES |
Leshan Radio Company |
| 644 |
FM404 |
1A GLASS PASSIVATED SMA DIODES |
Leshan Radio Company |
| 645 |
FM405 |
1A GLASS PASSIVATED SMA DIODES |
Leshan Radio Company |
| 646 |
FM406 |
1A GLASS PASSIVATED SMA DIODES |
Leshan Radio Company |
| 647 |
FM407 |
1A GLASS PASSIVATED SMA DIODES |
Leshan Radio Company |
| 648 |
FMM1103VJ |
The FMM1103VJ is a GaAs Microwave Static Frequency Divider designed for dividing an input signal by 8 over a frequency range from 2.0 to 12.0 GHz |
etc |
| 649 |
FR204G |
400 V, 2 A glass passivated fast recovery rectifier |
Formosa MS |
| 650 |
FUF2001 |
50 V, 2 A glass passivated ultrafast recovery rectifier |
Fagor |
| 651 |
FUF2002 |
100 V, 2 A glass passivated ultrafast recovery rectifier |
Fagor |
| 652 |
FUF2003 |
200 V, 2 A glass passivated ultrafast recovery rectifier |
Fagor |
| 653 |
FUF2004 |
400 V, 2 A glass passivated ultrafast recovery rectifier |
Fagor |
| 654 |
FUF2005 |
600 V, 2 A glass passivated ultrafast recovery rectifier |
Fagor |
| 655 |
FUF2006 |
800 V, 2 A glass passivated ultrafast recovery rectifier |
Fagor |
| 656 |
FUF2007 |
1000 V, 2 A glass passivated ultrafast recovery rectifier |
Fagor |
| 657 |
GAL6001 |
High Performance E2CMOS FPLA Generic Array Logic |
Lattice Semiconductor |
| 658 |
GAL6001B-30LJ |
High Performance E2CMOS FPLA Generic Array Logic |
Lattice Semiconductor |
| 659 |
GAL6001B-30LP |
High Performance E2CMOS FPLA Generic Array Logic |
Lattice Semiconductor |
| 660 |
GAL6002 |
High Performance E2CMOS FPLA Generic Array Logic |
Lattice Semiconductor |
| | | |
