| No. |
Part Name |
Description |
Manufacturer |
| 631 |
MAX8564A |
±1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers |
MAXIM - Dallas Semiconductor |
| 632 |
MAX8564AEUB |
±1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers |
MAXIM - Dallas Semiconductor |
| 633 |
MAX8564AEUB+ |
±1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers |
MAXIM - Dallas Semiconductor |
| 634 |
MAX8564AEUB+T |
±1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers |
MAXIM - Dallas Semiconductor |
| 635 |
MAX8564AEUB-T |
±1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers |
MAXIM - Dallas Semiconductor |
| 636 |
MAX8564EUB |
±1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers |
MAXIM - Dallas Semiconductor |
| 637 |
MAX8564EUB+ |
±1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers |
MAXIM - Dallas Semiconductor |
| 638 |
MAX8564EUB+T |
±1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers |
MAXIM - Dallas Semiconductor |
| 639 |
MJ14000 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 640 |
MJ3101 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. |
SemeLAB |
| 641 |
MJ3202 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 642 |
MJ400 |
Bipolar NPN Device |
SemeLAB |
| 643 |
MJ411 |
Bipolar NPN Device |
SemeLAB |
| 644 |
MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 645 |
MJD18002D2 |
Bipolar NPN Transistor |
ON Semiconductor |
| 646 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 647 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 648 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 649 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
| 650 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 651 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 652 |
MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 653 |
PZTA42 |
EPITAXIAL PLANAR NPN TRANSISTOR |
Korea Electronics (KEC) |
| 654 |
RCA-40290 |
Epitaxial planar NPN silicon RF transistor |
RCA Solid State |
| 655 |
RCA-40291 |
Epitaxial planar NPN silicon RF transistor |
RCA Solid State |
| 656 |
RCA-40292 |
Epitaxial planar NPN silicon RF transistor |
RCA Solid State |
| 657 |
SDT7604 |
Bipolar NPN Device |
SemeLAB |
| 658 |
SDT96301 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 659 |
SF_2N2218 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 660 |
SF_2N2219 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
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