| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 632 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
| 633 |
2SB471 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 634 |
2SB472 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 635 |
2SB496 |
Germanium Transistor PNP Alloyed Junction, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 636 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
| 637 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 638 |
2SB75 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 639 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 640 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 641 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 642 |
2SB77 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 643 |
2SB77A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 644 |
2SC1055H |
Transistor Silicon NPN Triple Diffused, intended for use in Power Switching Regulator |
Hitachi Semiconductor |
| 645 |
2SC1059 |
Transistor Silicon NPN Triple Diffused LTP, intended for use in Class A Output Amplifier |
Hitachi Semiconductor |
| 646 |
2SC1060 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 647 |
2SC1061 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 648 |
2SC116T |
Silicon Transistor NPN Triple Diffued Planar, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 649 |
2SC1222 |
NPN silicon transistor designed for use in AF low noise amplifier |
NEC |
| 650 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 651 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 652 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 653 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 654 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 655 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 656 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 657 |
2SC2060 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 658 |
2SC2061 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 659 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 660 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
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