No. |
Part Name |
Description |
Manufacturer |
631 |
HM51S4800CLJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
632 |
HM51S4800CLJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
633 |
HM51S4800CLJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
634 |
HM51S4800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
635 |
HM51S4800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
636 |
HM51S4800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
637 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
638 |
HM51S4800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
639 |
HM51S4800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
640 |
HYB4116 |
Dynamic MOS random access memory (RAM) capacity 16384 bits |
Siemens |
641 |
IDT70824 |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
642 |
IDT70824L |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
643 |
IDT70824L20G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
644 |
IDT70824L20GB |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
645 |
IDT70824L20PF |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
646 |
IDT70824L20PF8 |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
647 |
IDT70824L20PFB |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
648 |
IDT70824L25G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
649 |
IDT70824L25GB |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
650 |
IDT70824L25PF |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
651 |
IDT70824L25PF8 |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
652 |
IDT70824L25PFB |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
653 |
IDT70824L25PFI |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
654 |
IDT70824L25PFI8 |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
655 |
IDT70824L35G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
656 |
IDT70824L35GB |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
657 |
IDT70824L35PF |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
658 |
IDT70824L35PF8 |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
659 |
IDT70824L35PFB |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
660 |
IDT70824L45G |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
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