| No. |
Part Name |
Description |
Manufacturer |
| 631 |
IRF330 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 632 |
IRF332 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 633 |
IRF350 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
| 634 |
IRF352 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 635 |
IRF720 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 636 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 637 |
IRF730 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 638 |
IRF732 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 639 |
IRFF310 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
| 640 |
IRFF312 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
| 641 |
ISL8240M |
Dual 20A/Single 40A Step-Down Power Module |
Intersil |
| 642 |
JAN1N4372 |
Military Silicon Zener Diode 400 Milliwatt Low Voltage 3.0V |
Transitron Electronic |
| 643 |
K1040 |
Silicon rectifier diode 40A |
IPRS Baneasa |
| 644 |
K1040R |
Silicon rectifier diode 40A |
IPRS Baneasa |
| 645 |
K1140 |
Silicon rectifier diode 40A |
IPRS Baneasa |
| 646 |
K1140R |
Silicon rectifier diode 40A |
IPRS Baneasa |
| 647 |
K4040 |
Silicon rectifier diode 40A |
IPRS Baneasa |
| 648 |
K4040R |
Silicon rectifier diode 40A |
IPRS Baneasa |
| 649 |
K6040 |
Silicon rectifier diode 40A |
IPRS Baneasa |
| 650 |
K6040R |
Silicon rectifier diode 40A |
IPRS Baneasa |
| 651 |
KBL04 |
Diode Rectifier Bridge Single 400V 4A 4-Pin Case KBL Bulk |
New Jersey Semiconductor |
| 652 |
KBL05 |
Diode Rectifier Bridge Single 400V 4A 4-Pin Case KBL |
New Jersey Semiconductor |
| 653 |
KBP04 |
Diode Rectifier Bridge Single 400V 2A 4-Pin(4+Tab) Case KBP |
New Jersey Semiconductor |
| 654 |
KBP04G |
Diode Rectifier Bridge Single 400V 1.5A 4-Pin Case KBP |
New Jersey Semiconductor |
| 655 |
KBP04M |
Diode Rectifier Bridge Single 400V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 656 |
KBPC10-04 |
Diode Rectifier Bridge Single 400V 10A 4-Pin Case KBPC |
New Jersey Semiconductor |
| 657 |
KBPC1004 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 400 V. |
Comchip Technology |
| 658 |
KBPC1504 |
15 A high current bridge rectifier. Max reccurent peak reverse voltage 400 V. |
Comchip Technology |
| 659 |
KBPC1504 |
Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V |
Wing Shing Computer Components |
| 660 |
KBPC1504 |
Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V |
Wing Shing Computer Components |
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