| No. |
Part Name |
Description |
Manufacturer |
| 631 |
1N6300 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 632 |
1N6300A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 633 |
1N6301 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 634 |
1N6301A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 635 |
1N6302 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 636 |
1N6302A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 637 |
1N6303 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 638 |
1N6303A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 639 |
1N6373 |
5.00V; 160A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 640 |
1N6374 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 641 |
1N6375 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 642 |
1N6376 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 643 |
1N6377 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 644 |
1N6378 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 645 |
1N6379 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 646 |
1N6380 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 647 |
1N6381 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 648 |
1N6382 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 649 |
1N6383 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 650 |
1N6384 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 651 |
1N6385 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 652 |
1N6386 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 653 |
1N6387 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 654 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 655 |
1N6389 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 656 |
1SMB5913A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 657 |
1SMB5914A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 658 |
1SMB5915A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 659 |
1SMB5916A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 660 |
1SMB5917A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
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