No. |
Part Name |
Description |
Manufacturer |
631 |
2SA483 |
Audio Frequency Transistor |
TOSHIBA |
632 |
2SA484 |
Audio Frequency Transistor |
TOSHIBA |
633 |
2SA486 |
Audio Frequency Transistor |
TOSHIBA |
634 |
2SA489 |
Audio Frequency Transistor |
TOSHIBA |
635 |
2SA49 |
Radio Frequency Transistor specification table |
TOSHIBA |
636 |
2SA49 |
High-Frequency Transistor BC BAND |
TOSHIBA |
637 |
2SA493 |
Audio Frequency Transistor |
TOSHIBA |
638 |
2SA494 |
Audio Frequency Transistor |
TOSHIBA |
639 |
2SA495 |
Radio Frequency Transistor specification table |
TOSHIBA |
640 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
641 |
2SA496 |
Audio Frequency Transistor |
TOSHIBA |
642 |
2SA497 |
Audio Frequency Transistor |
TOSHIBA |
643 |
2SA498 |
Audio Frequency Transistor |
TOSHIBA |
644 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
645 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
646 |
2SA503 |
Silicon PNP epitaxial high frequency transistor |
TOSHIBA |
647 |
2SA504 |
Silicon PNP epitaxial high frequency transistor |
TOSHIBA |
648 |
2SA505 |
Audio Frequency Transistor |
TOSHIBA |
649 |
2SA509 |
Audio Frequency Transistor |
TOSHIBA |
650 |
2SA52 |
Radio Frequency Transistor specification table |
TOSHIBA |
651 |
2SA52 |
High-Frequency Transistor BC BAND |
TOSHIBA |
652 |
2SA52 |
Germanium PNP alloy junction transistor, AM Frequency Converter Applications |
TOSHIBA |
653 |
2SA53 |
Radio Frequency Transistor specification table |
TOSHIBA |
654 |
2SA53 |
High-Frequency Transistor BC BAND |
TOSHIBA |
655 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
656 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
657 |
2SA561 |
Audio Frequency Transistor |
TOSHIBA |
658 |
2SA562 |
Audio Frequency Transistor |
TOSHIBA |
659 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
660 |
2SA564 |
Audio Frequency Small Signal Transistors |
Semiconductor Technology |
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