| No. |
Part Name |
Description |
Manufacturer |
| 631 |
IRF9395MTR1PBF |
A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance |
International Rectifier |
| 632 |
IRF9395MTRPBF |
A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance |
International Rectifier |
| 633 |
IRHNJ3130 |
100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
International Rectifier |
| 634 |
IRHNJ4130 |
100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
International Rectifier |
| 635 |
IRL6283M |
20V Single N-Channel Low Logic Level HEXFET Power MOSFET in a DirectFET MD Lead-Free package |
International Rectifier |
| 636 |
IRL6283MTRPBF |
20V Single N-Channel Low Logic Level HEXFET Power MOSFET in a DirectFET MD Lead-Free package |
International Rectifier |
| 637 |
IRL7486M |
40V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package |
International Rectifier |
| 638 |
IRL7486MTRPBF |
40V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package |
International Rectifier |
| 639 |
IRMCO203 |
Sensorless control object code license for AC permanent magnet motor |
International Rectifier |
| 640 |
IRMCS203 |
Sensorless control hardware platform for AC permanent magnet motor |
International Rectifier |
| 641 |
IRMCS2033 |
Low Voltage Sensorless Drive Design Platform for Permanent Magnet Motors |
International Rectifier |
| 642 |
IXBH15N140 |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 643 |
IXBH15N160 |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 644 |
IXBH16N170A |
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 645 |
IXBH20N140 |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 646 |
IXBH20N160 |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 647 |
IXBH9N140G |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 648 |
IXBH9N160G |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 649 |
IXBT16N170A |
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 650 |
IXFE-44N50QD2 |
MOSFET Modules |
IXYS |
| 651 |
IXFE-44N50QD3 |
MOSFET Modules |
IXYS |
| 652 |
IXFE-48N50QD2 |
MOSFET Modules |
IXYS |
| 653 |
IXFE-48N50QD3 |
MOSFET Modules |
IXYS |
| 654 |
IXFN-48N50U2 |
MOSFET Modules |
IXYS |
| 655 |
IXFN-48N50U3 |
MOSFET Modules |
IXYS |
| 656 |
L034 |
MegaMOSTMFET Module |
IXYS Corporation |
| 657 |
LMV1014 |
1.7 V to 5 V, 38 mA amplifier for 3-wire analog electret microphone |
National Semiconductor |
| 658 |
LMV1032 |
Amplifiers for 3 Wire Analog Electret Microphones |
National Semiconductor |
| 659 |
LMV1032 |
Amplifiers for 3-Wire Analog Electret Microphones |
Texas Instruments |
| 660 |
LMV1032-06 |
Amplifiers for 3 Wire Analog Electret Microphones |
National Semiconductor |
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