| No. |
Part Name |
Description |
Manufacturer |
| 631 |
AMF2812D |
Hi-Rel DC-DC Rad-Tolerant Dual Converter in a AMF package |
International Rectifier |
| 632 |
AMF2812S |
Hi-Rel DC-DC Rad-Tolerant Single Converter in a AMF package |
International Rectifier |
| 633 |
AMF2815D |
Hi-Rel DC-DC Rad-Tolerant Dual Converter in a AMF package |
International Rectifier |
| 634 |
AMF2815S |
Hi-Rel DC-DC Rad-Tolerant Single Converter in a AMF package |
International Rectifier |
| 635 |
AMR900-60 |
Linear RF Power Amplifier |
TRW |
| 636 |
AN-282A |
Application Note - Systemizing RF power amplifier design |
Motorola |
| 637 |
AN-3755 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 638 |
AN-3755 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 639 |
AN-4591 |
Use of the RCA-2N6093 HF Power Transistor in Linear Applications - App. Note |
RCA Solid State |
| 640 |
AN-4774 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
| 641 |
AN-6010 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
| 642 |
AN-6126 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
| 643 |
AN-721 |
Application Note - Impedance matching networks applied to RF power transistors |
Motorola |
| 644 |
AN-790 |
Thermal rating of RF power transistors |
Motorola |
| 645 |
AN-791 |
A simplified approach to VHF power amplifier design |
Motorola |
| 646 |
AN007 |
Measurement and Evaluation of Pulse Shapes in T1/E1 Transmission Systems |
Cirrus Logic |
| 647 |
AN1223 |
RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY |
SGS Thomson Microelectronics |
| 648 |
AN1224 |
LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION |
SGS Thomson Microelectronics |
| 649 |
AN1225 |
RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS |
SGS Thomson Microelectronics |
| 650 |
AN1228 |
RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE |
SGS Thomson Microelectronics |
| 651 |
AN1294 |
POWERSO-10RF: THE FIRST TRUE RF POWER SMD PACKAGE |
SGS Thomson Microelectronics |
| 652 |
AN136 |
Using Xicor Digitally Controlled Potentiometers in Commercial RF Power Amplifier Applications |
Xicor |
| 653 |
AN48820A |
Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity |
Panasonic |
| 654 |
AN48830B |
Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity |
Panasonic |
| 655 |
AN554 |
CHOICE OF PROTECTION IN AUTOMOTIVE APPLICATIONS |
SGS Thomson Microelectronics |
| 656 |
AN561 |
WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS |
SGS Thomson Microelectronics |
| 657 |
AN647 |
HOW TO TEST OUTPUT RIPPLE AND NOISE OF POWER SUPPLIES |
SGS Thomson Microelectronics |
| 658 |
APPLICATION NOTE |
Impedance Matching networks applied to RF power transistors |
Motorola |
| 659 |
APPLICATION NOTE |
Building Push-Pull, multioctave, VHF power amplifiers |
Motorola |
| 660 |
APPLICATION NOTE |
Applying Power MOSFETs in Class D/E RF Power Amplifier Design |
Motorola |
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