| No. |
Part Name |
Description |
Manufacturer |
| 631 |
AAY52R |
Germanium point contact mixing diode for the J-(Ku-)band |
VALVO |
| 632 |
AAY56 |
Germanium point contact mixing diode for the S-band |
VALVO |
| 633 |
AAY56R |
Germanium point contact mixing diode for the S-band |
VALVO |
| 634 |
AAZ10 |
Germanium switching diode |
AEG-TELEFUNKEN |
| 635 |
ACDST-70-G |
Switching Diodes Array, VRRM=70V, VR=70V, PD=225mW, IF=200mA |
Comchip Technology |
| 636 |
ACDST-99-G |
Switching Diodes Array, VRRM=70V, VR=70V, PD=225mW, IF=200mA |
Comchip Technology |
| 637 |
ACDST6-4448TI-G |
Switching Diodes Array, VRRM=75V, VR=75V, PD=200mW, IF=100mA |
Comchip Technology |
| 638 |
ACDSV6-4448TI-G |
Switching Diodes Array, VRRM=80V, VR=80V, PD=200mW, IF=100mA |
Comchip Technology |
| 639 |
ACDSW21-G |
Small Signal Switching Diodes, VRRM=200V, VR=200V, PD=250mW, IF=200mA |
Comchip Technology |
| 640 |
ACDSW4148-G |
Small Signal Switching Diodes, VRRM=75V, VR=75V, PD=400mW, IF=150mA |
Comchip Technology |
| 641 |
ADA1107P |
Switching Diode Array |
American Microsemiconductor |
| 642 |
ADA1108P |
Switching Diode Array |
American Microsemiconductor |
| 643 |
AL-402 |
Infrared Emitting Diodes(GaAlAs) |
Kodenshi Corp |
| 644 |
AL-402 |
Infrared Emitting Diodes(GaAlAs) |
Kondenshi Corp |
| 645 |
AM2520F3C03 |
INFRA-RED EMITTING DIODES |
Kingbright Electronic |
| 646 |
AM2520SF4C03 |
INFRA-RED EMITTING DIODES |
Kingbright Electronic |
| 647 |
AM2520SYC03 |
The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. |
Kingbright Electronic |
| 648 |
AM4457F3C |
1.5 mm side look in ra-red emitting diode. Lens type water clear. |
Kingbright Electronic |
| 649 |
AN-551 |
Application Note - Tuning diode design techniques |
Motorola |
| 650 |
AP16083C |
In ra-red emitting diode. 1.6mm x 0.8mm SMT LED. Peak wavelength 940 nm. Lens type water clear. |
Kingbright Electronic |
| 651 |
AP1608F3C |
In ra-red emitting diode. Lens type water clear. |
Kingbright Electronic |
| 652 |
AP1608S4C |
In ra-red emitting diode. 1.6mm x 0.8mm SMT LED. Peak wavelength 880 nm. Lens type water clear. |
Kingbright Electronic |
| 653 |
AP1608SF4C |
In ra-red emitting diode. Lens type water clear. |
Kingbright Electronic |
| 654 |
AP2012F3C |
2.0x1.25mm INFRA-RED EMITTING DIODE |
Kingbright Electronic |
| 655 |
AP2012SF4C |
In ra-red emitting diode. 2.0 x 1.2mm SMT LED. Peak wavelength 880 nm. Lens type water clear. |
Kingbright Electronic |
| 656 |
APK3020SURC |
DH InGaAIP on GaAs substrate Light Emitting Diode. |
Kingbright Electronic |
| 657 |
APL3015F3C |
F3 Made with Gallium Arsenide Infrared Emitting diodes. |
Kingbright Electronic |
| 658 |
APL3015SF4C |
In ra-red emitting diode. 3.0 x 1.5 mm SMT LED. Lens type water clear. |
Kingbright Electronic |
| 659 |
APPLICATION NOTE 551 |
Tuning diode design techniques |
Motorola |
| 660 |
APT2012SGC |
Gallium Phosphide Green Light Emitting Diode. |
Kingbright Electronic |
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