| No. |
Part Name |
Description |
Manufacturer |
| 631 |
CMM2030 |
30 KHZ TO 30 GHZ GAAS MMIC OPTICAL MODULATOR DRIVER AMPLIFIER |
CELERITEK |
| 632 |
CMM2030-BD |
30 KHZ TO 30 GHZ GAAS MMIC OPTICAL MODULATOR DRIVER AMPLIFIER |
CELERITEK |
| 633 |
CMM2032-BD |
30 kHz to 32 GHz GaAs MMIC optical modulator driver amplifier |
CELERITEK |
| 634 |
CMM3020-BD-0048 |
30 kHz to 20 GHz GaAs MMIC optical modulator driver amplifier |
CELERITEK |
| 635 |
CMM3020-BD-0192 |
30 kHz to 20 GHz GaAs MMIC optical modulator driver amplifier |
CELERITEK |
| 636 |
CMM3030-BD-0048 |
30 kHz to 30 GHz GaAs MMIC optical modulator driver amplifier |
CELERITEK |
| 637 |
CMM3030-BD-0192 |
30 kHz to 30 GHz GaAs MMIC optical modulator driver amplifier |
CELERITEK |
| 638 |
CMY210 |
GaAs Components |
Infineon |
| 639 |
CMY211 |
GaAs MMIC |
Infineon |
| 640 |
CMY213 |
GaAs MMIC |
Infineon |
| 641 |
CMY91 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
Siemens |
| 642 |
CMY91 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
Siemens |
| 643 |
CNY17-2 |
Photocoupler GaAs Ired & Photo-Transistor |
TOSHIBA |
| 644 |
CNY17-3 |
Photocoupler GaAs Ired & Photo-Transistor |
TOSHIBA |
| 645 |
CNY17-4 |
Photocoupler GaAs Ired & Photo-Transistor |
TOSHIBA |
| 646 |
CQX14 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 647 |
CQX14 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 648 |
CQX15 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 649 |
CQX15 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 650 |
CQX16 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 651 |
CQX16 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 652 |
CQX17 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 653 |
CQX17 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 654 |
CQX48 |
GaAs Infrared Emitting Diode in Side View Package |
Vishay |
| 655 |
CQY11B |
GaAs infrared LED |
mble |
| 656 |
CQY13 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 657 |
CQY23 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 658 |
CQY36N |
GaAs Infrared Emitting Diode in Miniature (T-¾) Package |
Vishay |
| 659 |
CQY37N |
GaAs Infrared Emitting Diode in Miniature (T-¾) Package |
Vishay |
| 660 |
D10040180GT |
40 - 1000 MHz, 18 dB GaAs Power Doubler Hybrid Amplifier |
Qorvo |
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