| No. |
Part Name |
Description |
Manufacturer |
| 631 |
BFQ65 |
NPN microwave NPN transistor, designed for use in the GHz range, very low noise |
Philips |
| 632 |
BFR14A |
NPN silicon planar microwave transistor |
Siemens |
| 633 |
BFR14B |
NPN silicon planar microwave transistor |
Siemens |
| 634 |
BFR14B |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz |
Siemens |
| 635 |
BFR14C |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz |
Siemens |
| 636 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 637 |
BFR90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 638 |
BFR91 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 639 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 640 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 641 |
BFR96 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 642 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 643 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
| 644 |
BFY181 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 645 |
BFY182 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 646 |
BFY183 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 647 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
| 648 |
BFY196 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
Siemens |
| 649 |
BFY280 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 650 |
BFY90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 651 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 652 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 653 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 654 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 655 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 656 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 657 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 658 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 659 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 660 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| | | |
