| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2N5155 |
PNP Germanium power transistor, collector-emitter sustaining voltage capability |
Motorola |
| 632 |
2N5160 |
PNP silicon RF power transistor for military and industrial equipment |
Motorola |
| 633 |
2N5161 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 634 |
2N5162 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 635 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 636 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 637 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 638 |
2N5545JAN |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 639 |
2N5545TX |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 640 |
2N5545TXV |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 641 |
2N5546JAN |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 642 |
2N5546TX |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 643 |
2N5546TXV |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 644 |
2N5547JAN |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 645 |
2N5547TX |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 646 |
2N5547TXV |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 647 |
2N6137 |
MILITARY |
New Jersey Semiconductor |
| 648 |
2N6137 |
Military Planar TO-18 Hermetic |
Unitrode |
| 649 |
2N665 |
PNP germanium power transistor in military and industrial equipment |
Motorola |
| 650 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 651 |
2N918ACSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 652 |
2N918CSM |
GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 653 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 654 |
2SC372 |
Silicon NPN epitaxial planar transistor, versatile utility in both RF, AF applications |
TOSHIBA |
| 655 |
2SC373 |
Silicon NPN epitaxial planar transistor, versatile utility in both RF, AF applications |
TOSHIBA |
| 656 |
302 |
QUAD 2 INPUT BUFFER Collector 60mA capability |
Amelco Semiconductor |
| 657 |
302B |
QUAD 2 INPUT BUFFER Collector 60mA capability |
Amelco Semiconductor |
| 658 |
302C |
QUAD 2 INPUT BUFFER Collector 60mA capability |
Amelco Semiconductor |
| 659 |
30PRA60 |
FRD HIGH SURGE CAPABILITY |
Nihon |
| 660 |
32TSOP |
PACKAGE RELIABILITY REPORT |
MAXIM - Dallas Semiconductor |
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