| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2SC4080 |
NPN Bipolar Transistor for HF/Wide Band Amplifiers |
ON Semiconductor |
| 632 |
2SC4110 |
NPN Bipolar Transistor for Switching Regulator Applications |
ON Semiconductor |
| 633 |
2SC4332 |
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
NEC |
| 634 |
2SC4332-Z |
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
NEC |
| 635 |
2SC4346 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING |
NEC |
| 636 |
2SC4346-Z |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING |
NEC |
| 637 |
2SC4423 |
NPN Bipolar Transistor for Switching Regulator Applications |
ON Semiconductor |
| 638 |
2SC4883A |
Transistor For Power Amplifier |
Sanken |
| 639 |
2SC5200N |
Power transistor for high-speed switching applications |
TOSHIBA |
| 640 |
2SC5248 |
Transistor for audio amplifier output stages / TV velocity modulation |
ROHM |
| 641 |
2SC5288 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 642 |
2SC5288-T1 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 643 |
2SC5289 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 644 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
| 645 |
2SC5376FV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 646 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 647 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 648 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 649 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 650 |
2SC5431 |
NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX |
NEC |
| 651 |
2SC5432 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 652 |
2SC5433 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 653 |
2SC5434 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 654 |
2SC5435 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 655 |
2SC5437 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 656 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 657 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 658 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 659 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 660 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
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