No. |
Part Name |
Description |
Manufacturer |
631 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
632 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
633 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
634 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
635 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
636 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
637 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
638 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
639 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
640 |
BC327 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
641 |
BC327 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
642 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
643 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
644 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
645 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
646 |
BC327-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
647 |
BC327-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
648 |
BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
649 |
BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
650 |
BC327-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
651 |
BC327-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
652 |
BC328 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
653 |
BC328 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
654 |
BC328 |
Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. |
USHA India LTD |
655 |
BC328-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
656 |
BC328-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
657 |
BC328-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
658 |
BC328-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
659 |
BC328-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
660 |
BC328-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
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