| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2SC1199 |
Silicon NPN epitaxial planar high frequency low noise transistor |
TOSHIBA |
| 632 |
2SC1222 |
NPN silicon transistor designed for use in AF low noise amplifier |
NEC |
| 633 |
2SC1222 |
Transistors LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 634 |
2SC1335 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
Unknow |
| 635 |
2SC1380 |
Silicon NPN epitaxial planar high-frequency, low-noise transistor |
TOSHIBA |
| 636 |
2SC1380A |
Silicon NPN epitaxial planar high-frequency, low-noise transistor |
TOSHIBA |
| 637 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 638 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 639 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 640 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 641 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 642 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 643 |
2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
| 644 |
2SC2350 |
NPN silicon epitaxial transistor, high frequency low noise amplifier |
NEC |
| 645 |
2SC2351 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 646 |
2SC2362 |
High-Voltage Low-Noise Amp Applications |
SANYO |
| 647 |
2SC2362K |
High-Voltage Low-Noise Amp Applications |
SANYO |
| 648 |
2SC2458(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications |
TOSHIBA |
| 649 |
2SC2458L |
TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 650 |
2SC2498 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 651 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 652 |
2SC2570A |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 653 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 654 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
| 655 |
2SC2671(H) |
Si NPN epitaxial planar. UHF low-noise amplifier. |
Panasonic |
| 656 |
2SC2737 |
NPN silicon transistor designed for low noise amplifier of VHF/UHF band |
NEC |
| 657 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 658 |
2SC2869 |
Low Noise Amplifier of VHF & UHF band |
NEC |
| 659 |
2SC2954-T1 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 660 |
2SC2954-T2 |
For amplify high frequency, low noise, and wide band. |
NEC |
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