| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 632 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
| 633 |
2SC2671(H) |
Si NPN epitaxial planar. UHF low-noise amplifier. |
Panasonic |
| 634 |
2SC2737 |
NPN silicon transistor designed for low noise amplifier of VHF/UHF band |
NEC |
| 635 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 636 |
2SC2869 |
Low Noise Amplifier of VHF & UHF band |
NEC |
| 637 |
2SC2954-T1 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 638 |
2SC2954-T2 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 639 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 640 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 641 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 642 |
2SC3110 |
Si NPN epitaxial planar. RF wide band low-noise amplifier. |
Panasonic |
| 643 |
2SC3268 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 644 |
2SC3302 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 645 |
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 646 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 647 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
| 648 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
| 649 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
| 650 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 651 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 652 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
| 653 |
2SC3356 |
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) |
NEC |
| 654 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
| 655 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
| 656 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
| 657 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 658 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 659 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 660 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
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