| No. |
Part Name |
Description |
Manufacturer |
| 631 |
3LP01M |
P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP |
ON Semiconductor |
| 632 |
3LP01S |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single SMCP |
ON Semiconductor |
| 633 |
3N145 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 634 |
3N146 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 635 |
3N147 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 636 |
3N148 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 637 |
3N149 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 638 |
3N150 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 639 |
3N151 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 640 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 641 |
3N155 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 642 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 643 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 644 |
3N155A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 645 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 646 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 647 |
3N156 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 648 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 649 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 650 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 651 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 652 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 653 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 654 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 655 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 656 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 657 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 658 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 659 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 660 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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