| No. |
Part Name |
Description |
Manufacturer |
| 631 |
FAR-F6CP-1G4890-D208 |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
| 632 |
FAR-F6CP-1G4890-D208-U |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
| 633 |
FAR-F6CP-1G4890-D208-V |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
| 634 |
FAR-F6CP-1G4890-D208-W |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
| 635 |
KC1850 |
C-values 220 pF - 0.01 µF, Voltage 63 - 160 VDC, Flat and linear TC, PCM 5 |
Vishay |
| 636 |
KP1830 |
C-values 100 pF - 0.033 µF, Voltage 63 - 630 VDC, High pulse load, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
| 637 |
KP1836 |
C-values 100 pF - 0.22 µF, Voltage 630 - 2000 VDC, Very high current and pulse load, Low losses, PCM 15-37.5 |
Vishay |
| 638 |
MKP 1839 |
C-values 1000 pF - 10 µF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL |
Vishay |
| 639 |
MKP 1840 |
C-values 4700 pF - 10 µF, Voltage 100 - 630 VDC, Low losses, Low dielectric absorption, PCM 5-37.5 |
Vishay |
| 640 |
MKP 1841 |
C-values 470 pF - 6.8 µF, Voltage 160 - 2000 VDC, Low losses, High current and pulse load, PCM 7.5-37.5 |
Vishay |
| 641 |
MKP 1841 -M |
C-values 470 pF - 4.7 µF, Voltage 250 - 2000 VDC, Low losses, High current and pulse load, Mini version, PCM 7.5-37.5 |
Vishay |
| 642 |
MKP 1845 |
C-values 1000 pF - 4.7 µF, Voltage 160 - 2000 VDC, Low losses, High current and pulse load, Low profile, AXIAL |
Vishay |
| 643 |
MKP 1846 |
C-values 1000 pF - 0.68 µF, Voltage 630 - 2000 VDC, Low losses, High current and pulse load, PCM 15-37.5 |
Vishay |
| 644 |
MKT 1813 |
C-values 470 pF - 22 µF, Voltage 63 - 1000 VDC, Low Profile, AXIAL |
Vishay |
| 645 |
MKT 1816 |
C-values 680 pF - 0.01 µF, Voltage 8000 - 15000 VDC, High voltage range, Low profile, AXIAL |
Vishay |
| 646 |
MKT 1817 |
C-values 1000 pF - 1.0 µF, Voltage 63 - 400 VDC, PCM5 |
Vishay |
| 647 |
MKT 1818 |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, PCM 7 |
Vishay |
| 648 |
MKT 1820 |
C-values 1000 pF - 15 µF, Voltage 63 - 1000 VDC, Max. temp. 125°C, PCM 10-27.5 |
Vishay |
| 649 |
MKT 1822 |
C-values 1000 pF - 15 µF, Voltage 63 - 1000 VDC, PCM 10-27.5 |
Vishay |
| 650 |
MKT 1826 |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked film, PCM 5 |
Vishay |
| 651 |
MKT 1826-E |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked Film, crimped to PCM 10 |
Vishay |
| 652 |
MMBV3102 |
Silicon voltage variable capacitance (EPICAP) diode 22pF 30V |
Motorola |
| 653 |
MMBV3102L |
Silicon voltage variable capacitance (EPICAP) diode 22pF 30V |
Motorola |
| 654 |
MV1401 |
Silicon Hyper-Abrupt Junction Tuning Diode 120-550pF 12V |
Motorola |
| 655 |
MV1403 |
Silicon Hyper-Abrupt Junction Tuning Diode 120-550pF 12V |
Motorola |
| 656 |
MV1404 |
Silicon Hyper-Abrupt Junction Tuning Diode 120-550pF 12V |
Motorola |
| 657 |
MV1405 |
Silicon Hyper-Abrupt Junction Tuning Diode 120-550pF 12V |
Motorola |
| 658 |
MV2101 |
Diode VAR Cap Single 30V 6.1pF 2-Pin TO-92 Box |
New Jersey Semiconductor |
| 659 |
MV2102 |
Diode VAR Cap Single 30V 0.3pF 2-Pin |
New Jersey Semiconductor |
| 660 |
MV2104 |
Diode VAR Cap Single 30V 10.8pF 2-Pin TO-92 |
New Jersey Semiconductor |
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