No. |
Part Name |
Description |
Manufacturer |
631 |
2SC3630 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
632 |
2SC3645 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
633 |
2SC3646 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
634 |
2SC3647 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
635 |
2SC3648 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
636 |
2SC3649 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
637 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
638 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
639 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
640 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
641 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
642 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
643 |
2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
644 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
645 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
646 |
2SC3669 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
647 |
2SC366G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
648 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
649 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
650 |
2SC3673 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS |
TOSHIBA |
651 |
2SC367G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
652 |
2SC3689 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
653 |
2SC3705 |
NPN Epitaxial Planar Silicon Darlington Transistor Printer Driver Applications |
SANYO |
654 |
2SC3708 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency Driver Applications |
SANYO |
655 |
2SC3709 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
656 |
2SC3709A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
657 |
2SC3710 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
658 |
2SC3710A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
659 |
2SC372 |
Silicon NPN epitaxial planar transistor, versatile utility in both RF, AF applications |
TOSHIBA |
660 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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