| No. |
Part Name |
Description |
Manufacturer |
| 631 |
HM51S4800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 632 |
HM51S4800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 633 |
HM51S4800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 634 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 635 |
HM51S4800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 636 |
HM51S4800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 637 |
HN29A128A0ABP-8E |
Memory>AG-AND / superAND Flash Memory>superAND Flash Memory |
Renesas |
| 638 |
HN29A128A0ABP-8E |
Memory>AG-AND / superAND Flash Memory>superAND Flash Memory |
Renesas |
| 639 |
HN29A128A1ABP-8E |
Memory>AG-AND / superAND Flash Memory>superAND Flash Memory |
Renesas |
| 640 |
HN29A128A1ABP-8E |
Memory>AG-AND / superAND Flash Memory>superAND Flash Memory |
Renesas |
| 641 |
HN29V102414T-50 |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 642 |
HN29V102414T-50H |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 643 |
HN29V128A0ABP-5E |
Memory>AG-AND / superAND Flash Memory>superAND Flash Memory |
Renesas |
| 644 |
HN29V128A0ABP-5E |
Memory>AG-AND / superAND Flash Memory>superAND Flash Memory |
Renesas |
| 645 |
HN29V128A1ABP-5E |
Memory>AG-AND / superAND Flash Memory>superAND Flash Memory |
Renesas |
| 646 |
HN29V128A1ABP-5E |
Memory>AG-AND / superAND Flash Memory>superAND Flash Memory |
Renesas |
| 647 |
HN29V25611AT-50 |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 648 |
HN29V25611AT-50H |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 649 |
HN29V51211T-50 |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 650 |
HN29V51211T-50H |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 651 |
HYB4116 |
Dynamic MOS random access memory (RAM) capacity 16384 bits |
Siemens |
| 652 |
IDT70824 |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
| 653 |
IDT70824L |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
| 654 |
IDT70824L20G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
| 655 |
IDT70824L20GB |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
| 656 |
IDT70824L20PF |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
| 657 |
IDT70824L20PF8 |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
| 658 |
IDT70824L20PFB |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
| 659 |
IDT70824L25G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
| 660 |
IDT70824L25GB |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
| | | |
