| No. |
Part Name |
Description |
Manufacturer |
| 631 |
FT313B |
NPN Epitaxial Planar Silicon Phototransistor Darlington |
IPRS Baneasa |
| 632 |
FT313C |
NPN Epitaxial Planar Silicon Phototransistor Darlington |
IPRS Baneasa |
| 633 |
FT314 |
NPN Epitaxial Planar Silicon Phototransistor Darlington |
IPRS Baneasa |
| 634 |
FT314A |
NPN Epitaxial Planar Silicon Phototransistor Darlington |
IPRS Baneasa |
| 635 |
FT314B |
NPN Epitaxial Planar Silicon Phototransistor Darlington |
IPRS Baneasa |
| 636 |
FT314C |
NPN Epitaxial Planar Silicon Phototransistor Darlington |
IPRS Baneasa |
| 637 |
ICL8063 |
Power Transistor Driver/Amplifier |
Intersil |
| 638 |
ILH200 |
Hermetic Phototransistor Dual Channel... |
Infineon |
| 639 |
ILH200 |
HERMETIC PHOTOTRANSISTOR DUAL CHANNEL OPTOCOUPLER |
Siemens |
| 640 |
IRFD213 |
(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage |
Motorola |
| 641 |
JAN2N2708 |
NPN silicon annular transistor designed for low power IF and RF use in VHF/UHF amplifier, mixer and oscillator applications |
Motorola |
| 642 |
JAN2N3127 |
PNP germanium mesa transistor designed for industrial and commercial VHF/UHF amplifier applications |
Motorola |
| 643 |
JAN2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 644 |
JAN2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 645 |
JAN2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 646 |
JAN2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 647 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 648 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 649 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 650 |
MA200 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
| 651 |
MA201 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
| 652 |
MA202 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
| 653 |
MA203 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
| 654 |
MA204 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
| 655 |
MA205 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
| 656 |
MA206 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
| 657 |
MD1130 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 658 |
MD1132 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 659 |
MD2219A |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 660 |
MD2369 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
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