| No. |
Part Name |
Description |
Manufacturer |
| 631 |
HM51S4800ATT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 632 |
HM51S4800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 633 |
HM51S4800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 634 |
HM51S4800CJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 635 |
HM51S4800CJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 636 |
HM51S4800CJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 637 |
HM51S4800CLJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 638 |
HM51S4800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 639 |
HM51S4800CLJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 640 |
HM51S4800CLJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 641 |
HM51S4800CLJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 642 |
HM51S4800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 643 |
HM51S4800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 644 |
HM51S4800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 645 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 646 |
HM51S4800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 647 |
HM51S4800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 648 |
HMC373LP3 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz |
Hittite Microwave Corporation |
| 649 |
HMC491LP3 |
GaAs MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.4 - 3.8 GHz |
Hittite Microwave Corporation |
| 650 |
HS-RTX2010 |
Radiation Hardened Real Time Express Microcontroller |
Intersil |
| 651 |
HS-RTX2010RH |
Radiation Hardened Real Time Express Microcontroller |
Intersil |
| 652 |
HS8-RTX2010RH |
Radiation Hardened Real Time Express Microcontroller |
Intersil |
| 653 |
HS8-RTX2010RH-8 |
Radiation Hardened Real Time Express Microcontroller |
Intersil |
| 654 |
HS8-RTX2010RH-Q |
Radiation Hardened Real Time Express Microcontroller |
Intersil |
| 655 |
HS9-RTX2010RH |
Radiation Hardened Real Time Express Microcontroller |
Intersil |
| 656 |
HS9-RTX2010RH-8 |
Radiation Hardened Real Time Express Microcontroller |
Intersil |
| 657 |
HS9-RTX2010RH-Q |
Radiation Hardened Real Time Express Microcontroller |
Intersil |
| 658 |
HYB4116 |
Dynamic MOS random access memory (RAM) capacity 16384 bits |
Siemens |
| 659 |
IDT70824 |
4K x 16 SARAMTM (Sequential Access / Random Access Memory) |
IDT |
| 660 |
IDT70824L |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
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