| No. |
Part Name |
Description |
Manufacturer |
| 631 |
ISPLSI2064VL-135LT100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 632 |
ISPLSI2064VL-135LT100I |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 633 |
ISPLSI2064VL-165LT100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 634 |
ISPLSI2128VE-100LT100 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 635 |
ISPLSI2128VE-135LT100 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 636 |
ISPLSI2128VE-135LT100I |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 637 |
ISPLSI2128VE-180LT100 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 638 |
ISPLSI2128VL-100LT100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 639 |
ISPLSI2128VL-135LT100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 640 |
ISPLSI2128VL-135LT100I |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 641 |
ISPLSI2128VL-150LT100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 642 |
ISPLSI5256VE-100LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 643 |
ISPLSI5256VE-100LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 644 |
ISPLSI5256VE-125LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 645 |
ISPLSI5256VE-125LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 646 |
ISPLSI5256VE-165LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
| 647 |
ISPLSI5256VE-80LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 648 |
ISPPAC-CLK5520V-01T100C |
In-System Programmable Clock Generator with Universal Fan-Out Buffer |
Lattice Semiconductor |
| 649 |
ISPPAC-CLK5520V-01T100I |
In-System Programmable Clock Generator with Universal Fan-Out Buffer |
Lattice Semiconductor |
| 650 |
ISPPAC-CLK5610V-01T100C |
In-System Programmable, Zero-Delay Clock Generator with Universal Fan-Out Buffer |
Lattice Semiconductor |
| 651 |
ISPPAC-CLK5610V-01T100I |
In-System Programmable, Zero-Delay Clock Generator with Universal Fan-Out Buffer |
Lattice Semiconductor |
| 652 |
ISPPAC-CLK5620V-01T100C |
In-System Programmable, Zero-Delay Clock Generator with Universal Fan-Out Buffer |
Lattice Semiconductor |
| 653 |
ISPPAC-CLK5620V-01T100I |
In-System Programmable, Zero-Delay Clock Generator with Universal Fan-Out Buffer |
Lattice Semiconductor |
| 654 |
IT100 |
P-CHANNEL JFET SWITCH |
Intersil |
| 655 |
IXTT100N25P |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 656 |
JWT100-522 |
Triple output 75 ~ 100W |
DENSEI-LAMBDA |
| 657 |
JWT100-525 |
Triple output 75 ~ 100W |
DENSEI-LAMBDA |
| 658 |
JWT100-5FF |
Triple output 75 ~ 100W |
DENSEI-LAMBDA |
| 659 |
K6T1008C2C-B |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 660 |
K6T1008C2C-DB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
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