| No. |
Part Name |
Description |
Manufacturer |
| 631 |
CM75TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 632 |
CM75TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 633 |
CM75TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 634 |
CM75TU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 635 |
CM75TU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 636 |
CM75TU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 637 |
CM75TU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 638 |
CM75TU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 639 |
CM75TU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 640 |
CM800DZ-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 641 |
CM800E2Z-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 642 |
CM800HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 643 |
CM800HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 644 |
CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 645 |
CM800HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 646 |
CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 647 |
CM800HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 648 |
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 649 |
CM900HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 650 |
CR02 |
LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 651 |
CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 652 |
CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 653 |
CR02AM-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 654 |
CR02AM-6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 655 |
CR02AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 656 |
CR02AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 657 |
CR02AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 658 |
CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 659 |
CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 660 |
CR03AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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