| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2N4119A |
Ultra Low Leakage, N-Channel JFETs |
Vishay |
| 632 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 633 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 634 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 635 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 636 |
2N5224 |
NPN low level switch. |
Fairchild Semiconductor |
| 637 |
2N5228 |
PNP low level switch. |
Fairchild Semiconductor |
| 638 |
2N525 |
Germanium PNP transistor, low level LF amplification |
SESCOSEM |
| 639 |
2N526 |
Germanium PNP transistor, low level LF amplification |
SESCOSEM |
| 640 |
2N527 |
Germanium PNP transistor, low level LF amplification |
SESCOSEM |
| 641 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 642 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 643 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 644 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 645 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 646 |
2N760A |
Low level amplifier transistor |
SGS-ATES |
| 647 |
2N910 |
Low level amplifier transistor |
SGS-ATES |
| 648 |
2N911 |
Low level amplifier transistor |
SGS-ATES |
| 649 |
2N929 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 650 |
2N929 |
Low level amplifier transistor |
SGS-ATES |
| 651 |
2N930 |
Low level, low noise NPN transistor |
ICCE |
| 652 |
2N930 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 653 |
2N930 |
Low level amplifier transistor |
SGS-ATES |
| 654 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 655 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 656 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 657 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 658 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 659 |
2SA564 |
Low Level and General Purpose Amplifiers |
Micro Electronics |
| 660 |
2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 |
Isahaya Electronics Corporation |
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