| No. |
Part Name |
Description |
Manufacturer |
| 6361 |
BD9G341AEFJ |
1ch Buck Converter Integrated FET |
ROHM |
| 6362 |
BD9G341AEFJ-E2 |
1ch Buck Converter Integrated FET |
ROHM |
| 6363 |
BD9G341AEFJ-LB |
1ch Buck Converter Integrated FET |
ROHM |
| 6364 |
BD9G341AEFJ-LBE2 |
1ch Buck Converter Integrated FET |
ROHM |
| 6365 |
BELASIGNA200 |
Programmable, Mixed-Signal Digital Signal Processor for Speech and Audio Applications |
ON Semiconductor |
| 6366 |
BELASIGNA250 |
Programmable Audio Processing System for Ultra-Low-Power Embedded and Portable Digital Audio |
ON Semiconductor |
| 6367 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 6368 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 6369 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 6370 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 6371 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 6372 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 6373 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 6374 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 6375 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 6376 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 6377 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 6378 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 6379 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 6380 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 6381 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 6382 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 6383 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 6384 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 6385 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 6386 |
BFW30 |
Silicon NPN planar epitaxial transistor for vertical amplifiers in broadband oscillographs and for broadband amplifiers |
VALVO |
| 6387 |
BGA622L7 |
Infineon Technologies Introduces Fully Integrated SiGe LNA for GPS, WLAN, UMTS and further Mobile Applications |
Infineon |
| 6388 |
BH25FB1WG |
SILICON MONOLITHIC INTEGRATED CIRCUIT |
etc |
| 6389 |
BH28FB1WG |
Silicon Monolithic lntegrated Circuit |
ROHM |
| 6390 |
BH28FB1WHFV |
SILICON MONOLITHIC INTEGRATED CIRCUIT |
ROHM |
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