| No. |
Part Name |
Description |
Manufacturer |
| 6361 |
IFN5564 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
| 6362 |
IFN5565 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
| 6363 |
IFN5566 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
| 6364 |
IFN5911 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
| 6365 |
IFN5912 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
| 6366 |
IFN6449 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 6367 |
IFN6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 6368 |
IFN860 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 6369 |
IMST225-F25S |
25MHz; 40ns; V(dd): 0 to 7V; V(in): -0.5 to +0.5V; 16-bit transputer. For real time processing, microprocessor applications, high speed multi processor systems, industrual control, robotics, etc. |
SGS Thomson Microelectronics |
| 6370 |
IMST225-G25S |
25MHz; 40ns; V(dd): 0 to 7V; V(in): -0.5 to +0.5V; 16-bit transputer. For real time processing, microprocessor applications, high speed multi processor systems, industrual control, robotics, etc. |
SGS Thomson Microelectronics |
| 6371 |
IMST225-J25S |
25MHz; 40ns; V(dd): 0 to 7V; V(in): -0.5 to +0.5V; 16-bit transputer. For real time processing, microprocessor applications, high speed multi processor systems, industrual control, robotics, etc. |
SGS Thomson Microelectronics |
| 6372 |
IMST805-F20E |
32-bit floating-point transputer |
SGS Thomson Microelectronics |
| 6373 |
IMST805-F25S |
32-bit floating-point transputer |
SGS Thomson Microelectronics |
| 6374 |
IMST805-G20E |
32-bit floating-point transputer |
SGS Thomson Microelectronics |
| 6375 |
IMST805-G25S |
32-bit floating-point transputer |
SGS Thomson Microelectronics |
| 6376 |
IMX8-7 |
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 6377 |
IN4148 |
Miniature Diode in glass package |
Newmarket Transistors NKT |
| 6378 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
| 6379 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
| 6380 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
| 6381 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
| 6382 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
| 6383 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
| 6384 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
| 6385 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
| 6386 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
| 6387 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
| 6388 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
| 6389 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
| 6390 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
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